#include "../main/SystemInclude.h"

/* = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = 

USER_PARAMS_ADDR    参数数据保存区，对应EEPROM的 0x10-0x6C0 区间
参数页说明：将 u16 MBReg[336]; u16 WordReg[128]; u32 DWordReg[64];
						总共 1712bytes 依次连续存储到USER_PARAMS_ADDR为起始地址的页;

CORRECT_DATA_ADDR   默认校准页保存区，对应EEPROM的 0x1000-及以后按照内码量设计的区间

= = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = =*/
//写参数数据保存区-临时缓冲区 
u8 param_buffer[TOTAL_PARAM_SIZE]		 __attribute__((aligned(4))); //4字节对齐

void update_param_bufferFromFlash(void)//
{
	memcpy(param_buffer, (void*)USER_PARAMS_ADDR, TOTAL_PARAM_SIZE);
}

//写参数数据保存区-将临时缓冲区param_buffer数据存入flash  ------------------
static void WriteAllParamToFlash(void)
{
	//擦除 Flash 页（USER_PARAMS_ADDR 是页起始）
	if(LHL_FLASH_Erase(USER_PARAMS_ADDR, USER_PARAMS_ADDR, LHL_LNG_TIMEOUT) != LHL_OK)
	{
		while(1);
	}
 //按 32-bit word 写入 必须 4-byte 对齐 
	u16 word_count = (TOTAL_PARAM_SIZE + 3)>>2;   // 向上取整 转换为32位数据的个数	

	LHL_FLASH_Program( USER_PARAMS_ADDR,  (uint32_t*)param_buffer,  word_count,  LHL_LNG_TIMEOUT  ); 
}


//写参数数据保存区-双字节保存区
u16 WriteShortParameterToFlash(u16 parameterAdr)
{
	//访问双字节数据保存区------------------------------------------------------------------
//	if((parameterAdr >=REG_MEM_ADDR_START) && (parameterAdr < REG_INT_DWORD_MEM_ADDR_START))
//	{}
	u8 *p =  param_buffer;
	
	tempL.Byte[2] = CRC8(tempL.Byte, 2);//计算新值校验码
	
	p += parameterAdr;
	//更新变量
	p[0] = tempL.Byte[0];
	p[1] = tempL.Byte[1];
	p[2] = tempL.Byte[2];
	
	//写param_buffer到Flash 
	WriteAllParamToFlash();
	
	tempL.Word[0] = ReadShortParameterFromFlash(parameterAdr,WordDefault[ADR_WORD_IDX(parameterAdr)][DEFAULT]);
  tempL.Byte[2] = 0;
	// 注意：此时不用更新 WordReg[index]
	// 因为上层会用返回值来更新：*WRSource = 返回值;
	return tempL.Word[0]; //上层会用此值更新 WordReg[I]
}


//写参数数据保存区-四字节保存区
u32 WriteLongParameterToFlash(u16 parameterAdr)
{
//	if( (parameterAdr >=REG_INT_DWORD_MEM_ADDR_START)&& parameterAdr <= REG_INT_DWORD_MEM_ADDR_END)
//	{		}
	tempDev.Byte[4] = CRC8(tempDev.Byte, 4);//计算新值校验码

	//更新变量
	u8 *p =  param_buffer;
	p += (parameterAdr );
	p[0] = tempDev.Byte[0];
	p[1] = tempDev.Byte[1];
	p[2] = tempDev.Byte[2];
	p[3] = tempDev.Byte[3];
	p[4] = tempDev.Byte[4];
	
	//写param_buffer到Flash 
	WriteAllParamToFlash();
	
	tempDev.DWord[0] = ReadLongParameterFromFlash(parameterAdr,WordDefault[ADR_DWORD_IDX(parameterAdr)][DEFAULT]);
  tempDev.Byte[4]  = 0; 
	
	return tempDev.DWord[0];
}


 
//写校准页保存区 ,二次修正保存区 ,不定长参数数据保存区---------------------------------------------------
void WriteMultiByteToFlash(u16 address, u8 *wrtData, u16 dataLenth, u8 flashAdr)
{
	(void)flashAdr; // 没有多个Flash 
	//默认校准曲线---------------------------------------------------------------
 	if(address >= CALI_DATA1_ADDR)//要写入的地址为原eeprom的校准区
	{
 		//0.转换成Flash地址
		u32	ADDR = (u32)(address - CALI_DATA1_ADDR);
		ADDR = ADDR + CORRECT_DATA_ADDR;
		//判断是否新一页，擦除新页准备写入
		if((ADDR&0x0FFF) == 0x000) LHL_FLASH_Erase(ADDR,ADDR,LHL_LNG_TIMEOUT);//ADDR跨页即ADDR为页首地址
		if(ADDR >(CORRECT_DATA_ADDR+ CALIB_STORED_SIZE) )	MBBuf.BusError = SLAVE_DEVICE_FAILURE;//溢出
		//写校准进入Flash
		LHL_FLASH_Program(ADDR,(u32 *)wrtData,dataLenth>>2 ,LHL_LNG_TIMEOUT);
	}
	//校准曲线2---------------------------------------------------------------
		//CALI_DATA2_ADDR   CORRECT_DATA2_ADDR CALIB_STORED_SIZE2
	//校准曲线3---------------------------------------------------------------
		//CALI_DATA3_ADDR   CORRECT_DATA3_ADDR CALIB_STORED_SIZE3
	//二次修正区---------------------------------------------------------------
//	else if()
//	{
//		USER_DCOEF_TAG_ADDR
//	}
	//写入多个到参数数据保存区------------------------------------------------------------------
	else if((address >=REG_MEMORY_ADDR) && (address <= REG_INT_DWORD_MEM_ADDR_END))
	{
		

		
		
		wrtData[dataLenth] = CRC8(wrtData, dataLenth);//计算新值校验码
		//更新变量
		u8 *p =  param_buffer;
		p += address;
		/*for(u8 i = 0 ; i < dataLenth+1 ; i ++)
		{
			p[i] = wrtData[i];
		}*/
    //每两个字节交换
    for (int i = 0; i < dataLenth; i += 2) {
        p[i]     = wrtData[i + 1]; //低地址
        p[i + 1] = wrtData[i];     //高地址
    }
		p[dataLenth]= wrtData[dataLenth];//CRC直接复制

		WriteAllParamToFlash();
	}
 
	
} 











//读双字节数据保存区------------------------------------------------------------------
u16 ReadShortParameterFromFlash(u16 parameterAdr , u16 parameterDefault)
{
//	if(parameterAdr >=REG_MEM_ADDR_START && parameterAdr < REG_INT_DWORD_MEM_ADDR_START)
//	{	}	
		u32	ADDR = ((u32)parameterAdr + USER_PARAMS_ADDR);// 将EEPROM 参数地址（如 MEM_ADDR_REG_0X30 = 0x10）转为 Flash 物理地址

		tempL.Word[0] = 0;
		memcpy(tempL.Byte,(const void*)ADDR, 3);

		if(tempL.Byte[2] != CRC8(tempL.Byte, 2))
		{
			 tempL.Word[0] = (u32)parameterDefault;
			 isReadParameterOK = 0;
		}
		else
		{
			 tempL.Byte[2] = 0;
			 isReadParameterOK = 1;
		}

		return tempL.Word[0]; 	

}
//读四字节数据保存区------------------------------------------------------------------
u32 ReadLongParameterFromFlash(u16 parameterAdr , u16 parameterDefault)
{
//	if( (parameterAdr >=REG_INT_DWORD_MEM_ADDR_START)&& parameterAdr <= REG_INT_DWORD_MEM_ADDR_END)
//	{		}
		u32	ADDR = (u32)(parameterAdr + USER_PARAMS_ADDR);
		tempDev.DWord[0] = 0;
		memcpy(tempDev.Byte,(const void*)ADDR, 5);

		if(tempDev.Byte[4] != CRC8(tempDev.Byte, 4))
		{
			 tempDev.DWord[0] = (u32)parameterDefault;
			 isReadParameterOK = 0;
		}
		else  
		{
			 isReadParameterOK = 1;
		}
		return tempDev.DWord[0];	

}

//读数据保存区,校准数据保存区------------------------------------------------------------------
void ReadMultiByteFromFlash(u16 address,u8 *wrtData, u16 dataLenth, u8 flashAdr)
{
	(void)flashAdr; // 没有多个Flash,避免编译器 warning 
	u32	ADDR;
	//读校准数据保存区--------------------------------------------------------
	//由于校准数据地址基准为eeprom的地址，而所有的校准都在该地址后，因此只需要判断这一个即可
	if(address >=CALI_DATA1_ADDR)
	{
		ADDR =(u32)(address-CALI_DATA1_ADDR );
		ADDR += CORRECT_DATA_ADDR; //转换为Flash地址
		memcpy(wrtData,(const void*)ADDR, dataLenth);
	}
	//读数据保存区----------------------------------------------------------
	else if((address >=REG_MEMORY_ADDR) && (address <= REG_INT_DWORD_MEM_ADDR_END)) 
	{
		ADDR =((u32)address + USER_PARAMS_ADDR);
		memcpy(wrtData,(const void*)ADDR, dataLenth);  //不定长参数的校验位是存了的，若判断但是默认值=？未判断
	}
}