218 lines
6.8 KiB
C
218 lines
6.8 KiB
C
#include "../main/SystemInclude.h"
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/* = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = =
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USER_PARAMS_ADDR 参数数据保存区，对应EEPROM的 0x10-0x6C0 区间
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参数页说明：将 u16 MBReg[336]; u16 WordReg[128]; u32 DWordReg[64];
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总共 1712bytes 依次连续存储到USER_PARAMS_ADDR为起始地址的页;
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CORRECT_DATA_ADDR 默认校准页保存区，对应EEPROM的 0x1000-及以后按照内码量设计的区间
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= = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = =*/
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//写参数数据保存区-临时缓冲区
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u8 param_buffer[TOTAL_PARAM_SIZE] __attribute__((aligned(4))); //4字节对齐
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void update_param_bufferFromFlash(void)//
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{
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memcpy(param_buffer, (void*)USER_PARAMS_ADDR, TOTAL_PARAM_SIZE);
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}
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//写参数数据保存区-将临时缓冲区param_buffer数据存入flash ------------------
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static void WriteAllParamToFlash(void)
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{
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//擦除 Flash 页（USER_PARAMS_ADDR 是页起始）
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if(LHL_FLASH_Erase(USER_PARAMS_ADDR, USER_PARAMS_ADDR, LHL_LNG_TIMEOUT) != LHL_OK)
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{
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while(1);
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}
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//按 32-bit word 写入 必须 4-byte 对齐
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u16 word_count = (TOTAL_PARAM_SIZE + 3)>>2; // 向上取整 转换为32位数据的个数
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LHL_FLASH_Program( USER_PARAMS_ADDR, (uint32_t*)param_buffer, word_count, LHL_LNG_TIMEOUT );
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}
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//写参数数据保存区-双字节保存区
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u16 WriteShortParameterToFlash(u16 parameterAdr)
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{
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//访问双字节数据保存区------------------------------------------------------------------
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// if((parameterAdr >=REG_MEM_ADDR_START) && (parameterAdr < REG_INT_DWORD_MEM_ADDR_START))
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// {}
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u8 *p = param_buffer;
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tempL.Byte[2] = CRC8(tempL.Byte, 2);//计算新值校验码
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p += parameterAdr;
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//更新变量
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p[0] = tempL.Byte[0];
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p[1] = tempL.Byte[1];
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p[2] = tempL.Byte[2];
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//写param_buffer到Flash
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WriteAllParamToFlash();
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tempL.Word[0] = ReadShortParameterFromFlash(parameterAdr,WordDefault[ADR_WORD_IDX(parameterAdr)][DEFAULT]);
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tempL.Byte[2] = 0;
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// 注意：此时不用更新 WordReg[index]
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// 因为上层会用返回值来更新：*WRSource = 返回值;
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return tempL.Word[0]; //上层会用此值更新 WordReg[I]
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}
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//写参数数据保存区-四字节保存区
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u32 WriteLongParameterToFlash(u16 parameterAdr)
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{
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// if( (parameterAdr >=REG_INT_DWORD_MEM_ADDR_START)&& parameterAdr <= REG_INT_DWORD_MEM_ADDR_END)
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// { }
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tempDev.Byte[4] = CRC8(tempDev.Byte, 4);//计算新值校验码
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//更新变量
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u8 *p = param_buffer;
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p += (parameterAdr );
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p[0] = tempDev.Byte[0];
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p[1] = tempDev.Byte[1];
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p[2] = tempDev.Byte[2];
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p[3] = tempDev.Byte[3];
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p[4] = tempDev.Byte[4];
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//写param_buffer到Flash
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WriteAllParamToFlash();
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tempDev.DWord[0] = ReadLongParameterFromFlash(parameterAdr,WordDefault[ADR_DWORD_IDX(parameterAdr)][DEFAULT]);
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tempDev.Byte[4] = 0;
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return tempDev.DWord[0];
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}
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//写校准页保存区 ,二次修正保存区 ,不定长参数数据保存区---------------------------------------------------
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void WriteMultiByteToFlash(u16 address, u8 *wrtData, u16 dataLenth, u8 flashAdr)
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{
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(void)flashAdr; // 没有多个Flash
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//默认校准曲线---------------------------------------------------------------
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if(address >= CALI_DATA1_ADDR)//要写入的地址为原eeprom的校准区
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{
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//0.转换成Flash地址
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u32 ADDR = (u32)(address - CALI_DATA1_ADDR);
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ADDR = ADDR + CORRECT_DATA_ADDR;
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//判断是否新一页，擦除新页准备写入
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if((ADDR&0x0FFF) == 0x000) LHL_FLASH_Erase(ADDR,ADDR,LHL_LNG_TIMEOUT);//ADDR跨页即ADDR为页首地址
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if(ADDR >(CORRECT_DATA_ADDR+ CALIB_STORED_SIZE) ) MBBuf.BusError = SLAVE_DEVICE_FAILURE;//溢出
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//写校准进入Flash
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LHL_FLASH_Program(ADDR,(u32 *)wrtData,dataLenth>>2 ,LHL_LNG_TIMEOUT);
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}
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//校准曲线2---------------------------------------------------------------
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//CALI_DATA2_ADDR CORRECT_DATA2_ADDR CALIB_STORED_SIZE2
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//校准曲线3---------------------------------------------------------------
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//CALI_DATA3_ADDR CORRECT_DATA3_ADDR CALIB_STORED_SIZE3
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//二次修正区---------------------------------------------------------------
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// else if()
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// {
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// USER_DCOEF_TAG_ADDR
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// }
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//写入多个到参数数据保存区------------------------------------------------------------------
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else if((address >=REG_MEMORY_ADDR) && (address <= REG_INT_DWORD_MEM_ADDR_END))
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{
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wrtData[dataLenth] = CRC8(wrtData, dataLenth);//计算新值校验码
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//更新变量
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u8 *p = param_buffer;
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p += address;
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/*for(u8 i = 0 ; i < dataLenth+1 ; i ++)
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{
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p[i] = wrtData[i];
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}*/
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//每两个字节交换
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for (int i = 0; i < dataLenth; i += 2) {
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p[i] = wrtData[i + 1]; //低地址
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p[i + 1] = wrtData[i]; //高地址
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}
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p[dataLenth]= wrtData[dataLenth];//CRC直接复制
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WriteAllParamToFlash();
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}
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}
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//读双字节数据保存区------------------------------------------------------------------
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u16 ReadShortParameterFromFlash(u16 parameterAdr , u16 parameterDefault)
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{
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// if(parameterAdr >=REG_MEM_ADDR_START && parameterAdr < REG_INT_DWORD_MEM_ADDR_START)
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// { }
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u32 ADDR = ((u32)parameterAdr + USER_PARAMS_ADDR);// 将EEPROM 参数地址（如 MEM_ADDR_REG_0X30 = 0x10）转为 Flash 物理地址
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tempL.Word[0] = 0;
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memcpy(tempL.Byte,(const void*)ADDR, 3);
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if(tempL.Byte[2] != CRC8(tempL.Byte, 2))
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{
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tempL.Word[0] = (u32)parameterDefault;
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isReadParameterOK = 0;
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}
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else
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{
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tempL.Byte[2] = 0;
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isReadParameterOK = 1;
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}
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return tempL.Word[0];
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}
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//读四字节数据保存区------------------------------------------------------------------
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u32 ReadLongParameterFromFlash(u16 parameterAdr , u16 parameterDefault)
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{
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// if( (parameterAdr >=REG_INT_DWORD_MEM_ADDR_START)&& parameterAdr <= REG_INT_DWORD_MEM_ADDR_END)
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// { }
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u32 ADDR = (u32)(parameterAdr + USER_PARAMS_ADDR);
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tempDev.DWord[0] = 0;
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memcpy(tempDev.Byte,(const void*)ADDR, 5);
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if(tempDev.Byte[4] != CRC8(tempDev.Byte, 4))
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{
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tempDev.DWord[0] = (u32)parameterDefault;
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isReadParameterOK = 0;
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}
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else
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{
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isReadParameterOK = 1;
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}
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return tempDev.DWord[0];
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}
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//读数据保存区,校准数据保存区------------------------------------------------------------------
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void ReadMultiByteFromFlash(u16 address,u8 *wrtData, u16 dataLenth, u8 flashAdr)
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{
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(void)flashAdr; // 没有多个Flash,避免编译器 warning
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u32 ADDR;
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//读校准数据保存区--------------------------------------------------------
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//由于校准数据地址基准为eeprom的地址，而所有的校准都在该地址后，因此只需要判断这一个即可
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if(address >=CALI_DATA1_ADDR)
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{
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ADDR =(u32)(address-CALI_DATA1_ADDR );
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ADDR += CORRECT_DATA_ADDR; //转换为Flash地址
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memcpy(wrtData,(const void*)ADDR, dataLenth);
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}
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//读数据保存区----------------------------------------------------------
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else if((address >=REG_MEMORY_ADDR) && (address <= REG_INT_DWORD_MEM_ADDR_END))
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{
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ADDR =((u32)address + USER_PARAMS_ADDR);
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memcpy(wrtData,(const void*)ADDR, dataLenth); //不定长参数的校验位是存了的，若判断但是默认值=？未判断
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}
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}
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